Central PMD16K100 PBFREE

包装/外壳

TO-3-2

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

200 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

1000

Collector-Emitter Saturation Voltage

2 V

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

20

Mounting Styles

通孔

Gain Bandwidth Product fT

4 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

40 A

DC Current Gain hFE Max

20000

RoHS

Details

Collector- Emitter Voltage VCEO Max

100 V

包装

Tube

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

100 V

连续集电极电流

20 A

产品类别

Bipolar Transistors - BJT