Central Semiconductor 2N1480 TIN/LEAD

包装/外壳

TO-39-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

55 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

1.4 V

Maximum DC Collector Current

-

Pd - Power Dissipation

5 W

Gain Bandwidth Product fT

1.5 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

20 at 200 mA, 4 V

DC Current Gain hFE Max

60 at 200 mA, 4 V

Factory Pack QuantityFactory Pack Quantity

500

系列

2N1480

包装

Bulk

配置

Single

集电极基极电压(VCBO)

100 V

连续集电极电流

1.5 A