Central Semiconductor 2N1711 TIN/LEAD

包装/外壳

TO-39-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

50 V

Emitter- Base Voltage VEBO

7 V

Factory Pack QuantityFactory Pack Quantity

500

DC Current Gain hFE Max

300

DC Collector/Base Gain hfe Min

100

Maximum Operating Temperature

+ 175 C

Gain Bandwidth Product fT

70 MHz

Pd - Power Dissipation

800 mW

Maximum DC Collector Current

-

Collector-Emitter Saturation Voltage

1 V

包装

Bulk

系列

2N1711

配置

Single

集电极基极电压(VCBO)

75 V

连续集电极电流

500 mA