Central Semiconductor 2N3495 TIN/LEAD

包装/外壳

TO-39-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

120 V

Emitter- Base Voltage VEBO

4.5 V

Collector-Emitter Saturation Voltage

350 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

600 mW

Gain Bandwidth Product fT

150 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

35 at 100 uA, 10 V

Factory Pack QuantityFactory Pack Quantity

500

系列

2N3495

包装

Bulk

配置

Single

集电极基极电压(VCBO)

120 V

连续集电极电流

100 mA