Central Semiconductor 2N3501 TIN/LEAD

包装/外壳

TO-39-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

150 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

200 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

1 W

Gain Bandwidth Product fT

150 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

35 at 0.1 mA, 10 V

DC Current Gain hFE Max

300 at 150 mA, 10 V

Factory Pack QuantityFactory Pack Quantity

500

系列

2N3501

包装

Bulk

配置

Single

集电极基极电压(VCBO)

150 V

连续集电极电流

300 mA