Central Semiconductor 2N3583 TIN/LEAD

包装/外壳

TO-66-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

175 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

5 V

Maximum DC Collector Current

5 A

Pd - Power Dissipation

35 W

Gain Bandwidth Product fT

10 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40

DC Current Gain hFE Max

200

Factory Pack QuantityFactory Pack Quantity

30

系列

2N3583

包装

Tube

配置

Single

集电极基极电压(VCBO)

250 V

连续集电极电流

1 A