Central Semiconductor 2N3585 TIN/LEAD

包装/外壳

TO-66-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

300 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

750 mV

Maximum DC Collector Current

5 A

Pd - Power Dissipation

35 W

Gain Bandwidth Product fT

10 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40 at 100 mA, 10 V

DC Current Gain hFE Max

80 at 1 A, 2 V

Factory Pack QuantityFactory Pack Quantity

30

系列

2N3585

包装

Tube

配置

Single

集电极基极电压(VCBO)

500 V

连续集电极电流

2 A