Central Semiconductor 2N3741A TIN/LEAD

包装/外壳

TO-66-2

Factory Pack QuantityFactory Pack Quantity

30

DC Current Gain hFE Max

200 at 250 mA, 1 V

DC Collector/Base Gain hfe Min

40 at 100 mA, 1 V

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

- 65 C

Gain Bandwidth Product fT

4 MHz

Pd - Power Dissipation

25 W

Maximum DC Collector Current

4 A

Collector-Emitter Saturation Voltage

600 mV

Emitter- Base Voltage VEBO

7 V

Collector- Emitter Voltage VCEO Max

80 V

Transistor Polarity

PNP

Mounting Styles

通孔

RoHS

N

包装

Tube

系列

2N3741A

配置

Single

集电极基极电压(VCBO)

80 V

连续集电极电流

4 A