Central Semiconductor 2N3766 PBFREE

包装/外壳

TO-66-2

表面安装

NO

终端数量

2

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

60 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

2.5 V

Pd - Power Dissipation

25 W

Gain Bandwidth Product fT

10 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40 at 500 mA, 5 V

DC Current Gain hFE Max

160 at 500 mA, 5 V

Factory Pack QuantityFactory Pack Quantity

30

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Operating Temperature-Min

-65 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

有

Transition Frequency-Nom (fT)

10 MHz

Manufacturer Part Number

2N3766PBFREE

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.61

系列

2N37

包装

Tube

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-MBFM-P2

配置

Single

箱体转运

COLLECTOR

晶体管应用

SWITCHING

极性/通道类型

NPN

JEDEC-95代码

TO-66

集电极基极电压(VCBO)

80 V

最大耗散功率(Abs)

25 W

集电极电流-最大值(IC)

4 A

最小直流增益（hFE）

40

连续集电极电流

4 A

集电极-发射器电压-最大值

60 V

VCEsat-最大值

2.5 V

集电极-基极电容-最大值

50 pF