Central Semiconductor 2N3766 TIN/LEAD

包装/外壳

TO-66-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

60 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

1 V

Maximum DC Collector Current

-

Pd - Power Dissipation

25 W

Gain Bandwidth Product fT

10 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

30 at 50 mA, 5 V

DC Current Gain hFE Max

160 at 500 mA, 5 V

Factory Pack QuantityFactory Pack Quantity

30

系列

2N3766

包装

Tube

配置

Single

集电极基极电压(VCBO)

80 V

连续集电极电流

4 A