Central Semiconductor 2N3962 TIN/LEAD

包装/外壳

TO-18-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

60 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

250 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

360 mW

Gain Bandwidth Product fT

40 MHz

DC Collector/Base Gain hfe Min

100

DC Current Gain hFE Max

450

Factory Pack QuantityFactory Pack Quantity

2000

系列

2N3962

包装

Bulk

配置

Single

集电极基极电压(VCBO)

60 V

连续集电极电流

200 mA