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价格梯度
内地含税价
1
¥4.74449
10
¥4.475936
100
¥4.222581
500
¥3.983563
1000
¥3.758077
Central Semiconductor 2N4123 TIN/LEAD
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2N4123 TIN/LEAD
420-2N4123 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT 40Vcbo 30Vceo 5.0Vebo 200mA 625mW
--最小包装量--
¥
总价: ¥
2N4123 TIN/LEAD详情
Central Semiconductor 2N4123 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
Factory Pack QuantityFactory Pack Quantity
2500
DC Current Gain hFE Max
150
DC Collector/Base Gain hfe Min
50
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Gain Bandwidth Product fT
250 MHz
Pd - Power Dissipation
625 mW
Maximum DC Collector Current
-
Collector-Emitter Saturation Voltage
300 mV
Emitter- Base Voltage VEBO
5 V
Collector- Emitter Voltage VCEO Max
30 V
Transistor Polarity
NPN
Mounting Styles
通孔
RoHS
N
包装
Bulk
系列
2N4123
配置
Single
集电极基极电压(VCBO)
40 V
连续集电极电流
200 mA
2N4123 TIN/LEAD拓展信息
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