Central Semiconductor 2N4232 TIN/LEAD

包装/外壳

TO-66-2

Factory Pack QuantityFactory Pack Quantity

30

DC Current Gain hFE Max

100

DC Collector/Base Gain hfe Min

25

Gain Bandwidth Product fT

4 MHz

Pd - Power Dissipation

35 W

Maximum DC Collector Current

-

Collector-Emitter Saturation Voltage

2 V

Emitter- Base Voltage VEBO

-

Collector- Emitter Voltage VCEO Max

60 V

Transistor Polarity

NPN

Mounting Styles

通孔

RoHS

N

包装

Tube

系列

2N4232

配置

Single

集电极基极电压(VCBO)

70 V

连续集电极电流

3 A