Central Semiconductor 2N4233 TIN/LEAD

包装/外壳

TO-66-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

-

Collector-Emitter Saturation Voltage

2 V

Maximum DC Collector Current

-

Pd - Power Dissipation

35 W

Gain Bandwidth Product fT

4 MHz

DC Collector/Base Gain hfe Min

25

DC Current Gain hFE Max

100

Factory Pack QuantityFactory Pack Quantity

30

系列

2N4233

包装

Tube

配置

Single

集电极基极电压(VCBO)

90 V

连续集电极电流

3 A