Central Semiconductor 2N4239 TIN/LEAD

包装/外壳

TO-39-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

600 mV

Gain Bandwidth Product fT

2 MHz

DC Collector/Base Gain hfe Min

30 at 250 mA, 1 V

DC Current Gain hFE Max

150 at 250 mA, 1 V

Factory Pack QuantityFactory Pack Quantity

500

系列

2N4239

包装

Bulk

配置

Single

集电极基极电压(VCBO)

100 V