Central Semiconductor 2N4256 PBFREE
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- 对比
2N4256 PBFREE
420-2N4256 PBFREE
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise
1最小包装量--
2N4256 PBFREE详情
Central Semiconductor 2N4256 PBFREE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
30 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
200 mV
Pd - Power Dissipation
1.5 W
Gain Bandwidth Product fT
200 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
20 at 0.2 V, 50 mA
DC Current Gain hFE Max
500 at 4.5 V, 2 mA
Factory Pack QuantityFactory Pack Quantity
2500
系列
2N4256
包装
Bulk
配置
Single
集电极基极电压(VCBO)
30 V
连续集电极电流
100 mA
2N4256 PBFREE拓展信息
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