Central Semiconductor 2N4296 TIN/LEAD

包装/外壳

TO-66-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

250 V

Emitter- Base Voltage VEBO

4 V

Collector-Emitter Saturation Voltage

900 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

20 W

Gain Bandwidth Product fT

20 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 175 C

DC Collector/Base Gain hfe Min

35 at 5 mA, 10 V

DC Current Gain hFE Max

150 at 50 mA, 10 V

Factory Pack QuantityFactory Pack Quantity

30

系列

2N4296

包装

Tube

配置

Single

集电极基极电压(VCBO)

350 V

连续集电极电流

1 A