Central Semiconductor 2N4298 PBFREE

包装/外壳

TO-66-2

表面安装

NO

终端数量

2

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

350 V

Emitter- Base Voltage VEBO

4 V

Collector-Emitter Saturation Voltage

1.5 V

Pd - Power Dissipation

20 W

Gain Bandwidth Product fT

20 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 175 C

DC Collector/Base Gain hfe Min

25 at 50 mA, 10 V

DC Current Gain hFE Max

75 at 50 mA, 10 V

Factory Pack QuantityFactory Pack Quantity

30

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Operating Temperature-Min

-65 °C

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

175 °C

Rohs Code

有

Transition Frequency-Nom (fT)

20 MHz

Manufacturer Part Number

2N4298PBFREE

Turn-on Time-Max (ton)

7000 ns

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Turn-off Time-Max (toff)

10000 ns

Risk Rank

5.71

系列

2N42

包装

Tube

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

端子位置

BOTTOM

终端形式

PIN/PEG

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

O-MBFM-P2

配置

Single

箱体转运

COLLECTOR

晶体管应用

SWITCHING

极性/通道类型

NPN

JEDEC-95代码

TO-66

集电极基极电压(VCBO)

500 V

最大耗散功率(Abs)

20 W

集电极电流-最大值(IC)

1 A

最小直流增益（hFE）

20

连续集电极电流

1 A

集电极-发射器电压-最大值

350 V

VCEsat-最大值

0.9 V