Central Semiconductor 2N4906 TIN/LEAD
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2N4906 TIN/LEAD
420-2N4906 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-3-2
大陆
立即发货

Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 87.5W
1最小包装量--
2N4906 TIN/LEAD详情
Central Semiconductor 2N4906 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-3-2
RoHS
N
Mounting Styles
通孔
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
80 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
1 V
Maximum DC Collector Current
-
Pd - Power Dissipation
87.5 W
Gain Bandwidth Product fT
4 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
25
DC Current Gain hFE Max
100
Factory Pack QuantityFactory Pack Quantity
20
系列
2N4906
包装
Tube
配置
Single
集电极基极电压(VCBO)
80 V
连续集电极电流
5 A
2N4906 TIN/LEAD拓展信息
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