Central Semiconductor 2N5050 PBFREE

包装/外壳

TO-66-2

表面安装

NO

终端数量

2

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

125 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

5 V

Pd - Power Dissipation

40 W

Gain Bandwidth Product fT

10 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 175 C

DC Collector/Base Gain hfe Min

25 at 750 mA, 5 V

DC Current Gain hFE Max

100 at 750 mA, 5 V

Factory Pack QuantityFactory Pack Quantity

30

Package Description

FLANGE MOUNT, O-MBFM-P2

Package Style

FLANGE MOUNT

Package Body Material

METAL

Operating Temperature-Min

-65 °C

Operating Temperature-Max

175 °C

Transition Frequency-Nom (fT)

10 MHz

Manufacturer Part Number

2N5050PBFREE

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Rise Time-Max (tr)

300 ns

Risk Rank

5.72

系列

2N50

包装

Tube

端子位置

BOTTOM

终端形式

PIN/PEG

Reach合规守则

compliant

JESD-30代码

O-MBFM-P2

配置

Single

晶体管应用

SWITCHING

极性/通道类型

NPN

JEDEC-95代码

TO-66

集电极基极电压(VCBO)

125 V

最大耗散功率(Abs)

40 W

集电极电流-最大值(IC)

2 A

最小直流增益（hFE）

5

连续集电极电流

2 A

集电极-发射器电压-最大值

125 V

VCEsat-最大值

5 V

集电极-基极电容-最大值

250 pF

最大下降时间 (tf)

1200 ns