Central Semiconductor 2N5086 TIN/LEAD

包装/外壳

TO-92-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

50 V

Emitter- Base Voltage VEBO

3 V

Collector-Emitter Saturation Voltage

300 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

625 mW

Gain Bandwidth Product fT

40 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

150 at 100 uA, 5 V

DC Current Gain hFE Max

500 at 100 uA, 5 V

Factory Pack QuantityFactory Pack Quantity

2500

系列

2N5086

包装

Bulk

配置

Single

集电极基极电压(VCBO)

50 V

连续集电极电流

50 mA