Central Semiconductor 2N5179 TIN/LEAD

包装/外壳

TO-72-4

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

12 V

Emitter- Base Voltage VEBO

2.5 V

Collector-Emitter Saturation Voltage

400 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

200 mW

Gain Bandwidth Product fT

2 GHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

25

DC Current Gain hFE Max

250

Factory Pack QuantityFactory Pack Quantity

2000

系列

2N5179

包装

Bulk

配置

Single

集电极基极电压(VCBO)

20 V

连续集电极电流

50 mA