Central Semiconductor 2N5296 TIN/LEAD

包装/外壳

TO-220-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

40 V

Emitter- Base Voltage VEBO

-

Collector-Emitter Saturation Voltage

1 V

Maximum DC Collector Current

-

Pd - Power Dissipation

36 W

Gain Bandwidth Product fT

800 kHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

30 at 1 A, 4 V

DC Current Gain hFE Max

120 at 1 A, 4 V

Factory Pack QuantityFactory Pack Quantity

50

系列

2N5296

包装

Bulk

配置

Single

集电极基极电压(VCBO)

60 V

连续集电极电流

4 A