Central Semiconductor 2N5301 TIN/LEAD

包装/外壳

TO-3-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

40 V

Emitter- Base Voltage VEBO

-

Collector-Emitter Saturation Voltage

4 V

Pd - Power Dissipation

200 W

Gain Bandwidth Product fT

4 MHz

DC Collector/Base Gain hfe Min

15

DC Current Gain hFE Max

60

Factory Pack QuantityFactory Pack Quantity

20

系列

2N5301

包装

Tube

配置

Single

集电极基极电压(VCBO)

40 V

连续集电极电流

30 A