Central Semiconductor 2N5303 TIN/LEAD

包装/外壳

TO-3-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

80 V

Collector-Emitter Saturation Voltage

1 V

Pd - Power Dissipation

200 mW

Gain Bandwidth Product fT

2 MHz

DC Collector/Base Gain hfe Min

40 at 2 V, 1 A

DC Current Gain hFE Max

60 at 10 A, 2 V

Factory Pack QuantityFactory Pack Quantity

20

系列

2N5303

包装

Tube

配置

Single

集电极基极电压(VCBO)

80 V

连续集电极电流

20 A