Central Semiconductor 2N5308 TIN/LEAD
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- 对比
2N5308 TIN/LEAD
420-2N5308 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT NPN 40Vcbo 40Vceo 12Vebo 300mA 625mW
1最小包装量--
2N5308 TIN/LEAD详情
Central Semiconductor 2N5308 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
Factory Pack QuantityFactory Pack Quantity
2500
DC Current Gain hFE Max
70000 at 2 mA, 5 V
DC Collector/Base Gain hfe Min
7000 at 2 mA, 5 V
Gain Bandwidth Product fT
60 MHz
Pd - Power Dissipation
625 mW
Maximum DC Collector Current
500 mA
Collector-Emitter Saturation Voltage
1.4 V
Emitter- Base Voltage VEBO
12 V
Collector- Emitter Voltage VCEO Max
40 V
Transistor Polarity
NPN
Mounting Styles
通孔
RoHS
N
包装
Bulk
系列
2N5308
配置
Single
集电极基极电压(VCBO)
40 V
连续集电极电流
300 mA
2N5308 TIN/LEAD拓展信息
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