Central Semiconductor 2N5338 TIN/LEAD

包装/外壳

TO-39-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

100 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

700 mV

Maximum DC Collector Current

-

Pd - Power Dissipation

6 W

Gain Bandwidth Product fT

30 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

30 at 500 mA, 2 V

DC Current Gain hFE Max

120 at 2 A, 2 V

Factory Pack QuantityFactory Pack Quantity

500

系列

2N5338

包装

Bulk

配置

Single

集电极基极电压(VCBO)

100 V

连续集电极电流

5 A