Central Semiconductor 2N5356 APM PBFREE
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2N5356 APM PBFREE
420-2N5356 APM PBFREE
晶体管 - 双极性晶体管(BJT)- 单个
TO-92-3
大陆
立即发货

Bipolar Transistors - BJT PNP 25Vcbo 25Vceo 4.0Vebo 350mA 360mW
1最小包装量--
2N5356 APM PBFREE详情
Central Semiconductor 2N5356 APM PBFREE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
RoHS
Details
Mounting Styles
通孔
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
25 V
Emitter- Base Voltage VEBO
4 V
Collector-Emitter Saturation Voltage
1 V
Maximum DC Collector Current
700 mA
Pd - Power Dissipation
360 mW
Gain Bandwidth Product fT
250 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
200 at 10 V, 2 mA
DC Current Gain hFE Max
500 at 1 V, 50 mA
Factory Pack QuantityFactory Pack Quantity
2000
系列
2N5356
包装
弹药包
配置
Single
集电极基极电压(VCBO)
25 V
连续集电极电流
350 mA
2N5356 APM PBFREE拓展信息
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