Central Semiconductor 2N5367 TIN/LEAD

包装/外壳

TO-92-3

Pd - Power Dissipation

625 mW

Maximum DC Collector Current

700 mA

Collector-Emitter Saturation Voltage

1 V

Emitter- Base Voltage VEBO

4 V

Collector- Emitter Voltage VCEO Max

40 V

Transistor Polarity

PNP

Mounting Styles

通孔

RoHS

N

Gain Bandwidth Product fT

250 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

200

DC Current Gain hFE Max

750

Factory Pack QuantityFactory Pack Quantity

2500

系列

2N5367

包装

Bulk

配置

Single

集电极基极电压(VCBO)

40 V

连续集电极电流

300 mA