Central Semiconductor 2N5415 PBFREE

包装/外壳

TO-39

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

200 V

Emitter- Base Voltage VEBO

4 V

Collector-Emitter Saturation Voltage

2.5 V

Maximum DC Collector Current

1 A

Pd - Power Dissipation

1 W

Gain Bandwidth Product fT

15 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

30

DC Current Gain hFE Max

150

Factory Pack QuantityFactory Pack Quantity

500

Unit Weight

0.071698 oz

Package Description

CYLINDRICAL, O-MBCY-W3

Package Style

CYLINDRICAL

Package Body Material

METAL

Operating Temperature-Min

-65 °C

Operating Temperature-Max

200 °C

Rohs Code

有

Transition Frequency-Nom (fT)

15 MHz

Manufacturer Part Number

2N5415PBFREE

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.63

包装

Bulk

JESD-609代码

e3

端子表面处理

Matte Tin (Sn)

端子位置

BOTTOM

终端形式

WIRE

Reach合规守则

compliant

JESD-30代码

O-MBCY-W3

配置

Single

极性/通道类型

PNP

JEDEC-95代码

TO-39

集电极基极电压(VCBO)

200 V

最大耗散功率(Abs)

1 W

集电极电流-最大值(IC)

1 A

最小直流增益（hFE）

30

连续集电极电流

1 A

集电极-发射器电压-最大值

200 V