Central Semiconductor 2N5429 PBFREE

包装/外壳

TO-66-2

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

100 V

Collector-Emitter Saturation Voltage

700 mV

Pd - Power Dissipation

40 W

Gain Bandwidth Product fT

30 MHz

DC Collector/Base Gain hfe Min

30 at 2 A

DC Current Gain hFE Max

120 at 2 A

Factory Pack QuantityFactory Pack Quantity

30

系列

2N54

包装

Tube

配置

Single

集电极基极电压(VCBO)

100 V

连续集电极电流

7 A