Central Semiconductor 2N5550 TIN/LEAD

包装/外壳

TO-92-3

Factory Pack QuantityFactory Pack Quantity

2500

DC Current Gain hFE Max

250 at 10 mA, 5 V

DC Collector/Base Gain hfe Min

60 at 1 mA, 5 V

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Gain Bandwidth Product fT

300 MHz

Pd - Power Dissipation

625 mW

Maximum DC Collector Current

-

Collector-Emitter Saturation Voltage

150 mV

Emitter- Base Voltage VEBO

6 V

Collector- Emitter Voltage VCEO Max

140 V

Transistor Polarity

NPN

Mounting Styles

通孔

RoHS

N

包装

Bulk

系列

2N5550

配置

Single

集电极基极电压(VCBO)

160 V

连续集电极电流

600 mA