Central Semiconductor 2N5551 TRA PBFREE

包装/外壳

TO-92-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

160 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

200 mV

Pd - Power Dissipation

1 W

Gain Bandwidth Product fT

300 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

50 at 10 V, 1 mA

DC Current Gain hFE Max

250 at 5 V, 10 mA

Factory Pack QuantityFactory Pack Quantity

2000

系列

2N5551

包装

Reel

配置

Single

集电极基极电压(VCBO)

180 V

连续集电极电流

600 mA