Central Semiconductor 2N5655 TIN/LEAD

包装/外壳

TO-126-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

250 V

Emitter- Base Voltage VEBO

6 V

Collector-Emitter Saturation Voltage

1 V

Maximum DC Collector Current

1 A

Pd - Power Dissipation

20 W

Gain Bandwidth Product fT

10 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

25

DC Current Gain hFE Max

250

Factory Pack QuantityFactory Pack Quantity

1000

系列

2N5655

包装

Bulk

配置

Single

集电极基极电压(VCBO)

275 V

连续集电极电流

500 mA