Central Semiconductor 2N5682 TIN/LEAD

包装/外壳

TO-39-3

Factory Pack QuantityFactory Pack Quantity

500

DC Current Gain hFE Max

150 at 250 mA, 2 V

DC Collector/Base Gain hfe Min

40 at 250 mA, 2 V

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

- 65 C

Gain Bandwidth Product fT

30 MHz

Pd - Power Dissipation

10 W

Maximum DC Collector Current

-

Collector-Emitter Saturation Voltage

600 mV

Emitter- Base Voltage VEBO

4 V

Collector- Emitter Voltage VCEO Max

120 V

Transistor Polarity

NPN

Mounting Styles

通孔

RoHS

N

包装

Bulk

系列

2N5682

配置

Single

集电极基极电压(VCBO)

120 V

连续集电极电流

1 A