Central Semiconductor 2N5783 TIN/LEAD

包装/外壳

TO-39-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

40 V

Emitter- Base Voltage VEBO

3.5 V

Collector-Emitter Saturation Voltage

1 V

Maximum DC Collector Current

-

Pd - Power Dissipation

10 W

Gain Bandwidth Product fT

60 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

20 at 1.6 A, 2 V

DC Current Gain hFE Max

150 at 1.6 A, 2 V

Factory Pack QuantityFactory Pack Quantity

500

系列

2N5783

包装

Bulk

配置

Single

集电极基极电压(VCBO)

45 V

连续集电极电流

3.5 A