Central Semiconductor 2N5785 TIN/LEAD

包装/外壳

TO-39-3

Factory Pack QuantityFactory Pack Quantity

500

DC Current Gain hFE Max

100 at 1200 mA, 2 V

DC Collector/Base Gain hfe Min

20 at 1200mA, 2 V

Gain Bandwidth Product fT

1 MHz

Collector-Emitter Saturation Voltage

750 mV

Emitter- Base Voltage VEBO

5 V

Collector- Emitter Voltage VCEO Max

50 V

Transistor Polarity

NPN

Mounting Styles

通孔

RoHS

N

包装

Bulk

系列

2N5785

配置

Single

集电极基极电压(VCBO)

65 V