Central Semiconductor 2N5875

引脚数

3

材料

Si

EU RoHS

供应商未确认

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

双极电源

Number of Elements per Chip

1

Maximum Collector Base Voltage (V)

60

Maximum Collector-Emitter Voltage (V)

60

Maximum Base Emitter Saturation Voltage (V)

[email protected]@10A

Maximum Collector-Emitter Saturation Voltage (V)

[email protected]@10A|[email protected]@5A

Maximum DC Collector Current (A)

10

Maximum Collector Cut-Off Current (nA)

500000

Minimum DC Current Gain

4@10A@4V|20@4A@4V|35@1A@4V

Maximum Power Dissipation (mW)

150000

Maximum Transition Frequency (MHz)

4(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Mounting

通孔

Package Height

11.43(Max)

Package Width

26.67(Max)

Package Length

39.96(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-204-AA

Supplier Package

TO-3

Lead Shape

通孔

Emitter-Base Voltage

5(V)

Operating Temperature Classification

Military

Package Type

TO-3

Transistor Polarity

PNP

Collector-Base Voltage

60(V)

Operating Temp Range

-65C to 200C

Collector Current (DC)

10(A)

Number of Elements

1

Rad Hardened

无

Collector-Emitter Voltage

60(V)

DC Current Gain

35

包装

Sleeve

零件状态

活跃

类型

PNP

频率

4(MHz)

配置

Single

功率耗散

150(W)

输出功率

Not Required(W)