Central Semiconductor 2N5884 TIN/LEAD

包装/外壳

TO-3-2

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

1 V

Maximum DC Collector Current

50 A

Pd - Power Dissipation

200 W

Gain Bandwidth Product fT

4 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

35

DC Current Gain hFE Max

100

Factory Pack QuantityFactory Pack Quantity

20

Mounting Styles

通孔

RoHS

N

系列

2N5884

包装

Tube

配置

Single

集电极基极电压(VCBO)

80 V

连续集电极电流

25 A