Central Semiconductor 2N5955 TIN/LEAD

包装/外壳

TO-66-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

60 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

1 V

Maximum DC Collector Current

-

Pd - Power Dissipation

40 W

Gain Bandwidth Product fT

5 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

20 at 2.5 A, 4 V

DC Current Gain hFE Max

100 at 2.5 A, 4 V

Factory Pack QuantityFactory Pack Quantity

30

系列

2N5955

包装

Tube

配置

Single

集电极基极电压(VCBO)

70 V

连续集电极电流

6 A