Central Semiconductor 2N6039 TIN/LEAD

包装/外壳

TO-126-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

2 V

Maximum DC Collector Current

8 A

Pd - Power Dissipation

40 W

Gain Bandwidth Product fT

25 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

500 at 500 mA, 3 V

DC Current Gain hFE Max

15000 at 2 A, 3 V

Factory Pack QuantityFactory Pack Quantity

1000

系列

2N6039

包装

Bulk

配置

Single

集电极基极电压(VCBO)

80 V

连续集电极电流

4 A