Central Semiconductor 2N6052 TIN/LEAD
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- 对比
2N6052 TIN/LEAD
420-2N6052 TIN/LEAD
晶体管 - 双极性晶体管(BJT)- 单个
TO-3-2
大陆
立即发货

Darlington Transistors PNP 100Vcbo 100Vceo 5.0Vebo 12A 150W
1最小包装量--
2N6052 TIN/LEAD详情
Central Semiconductor 2N6052 TIN/LEAD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-3-2
RoHS
N
Transistor Polarity
PNP
Collector- Emitter Voltage VCEO Max
100 V
Emitter- Base Voltage VEBO
5 V
Maximum DC Collector Current
20 A
Maximum Collector Cut-off Current
2 mA
Pd - Power Dissipation
150 W
Mounting Styles
通孔
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
750 at 6 A, 3 V
Gain Bandwidth Product fT
4 MHz
Factory Pack QuantityFactory Pack Quantity
20
系列
2N6052
包装
Tube
配置
Single
集电极基极电压(VCBO)
100 V
连续集电极电流
12 A
2N6052 TIN/LEAD拓展信息
Central Semiconductor
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Central Semiconductor Corp
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