Central Semiconductor 2N6263 PBFREE

包装/外壳

TO-66-2

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

120 V

Collector-Emitter Saturation Voltage

1.2 V

Pd - Power Dissipation

20 W

Gain Bandwidth Product fT

800 kHz

DC Collector/Base Gain hfe Min

20 at 1.5 A

DC Current Gain hFE Max

100 at 1.5 A

Factory Pack QuantityFactory Pack Quantity

30

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

2N6263PBFREE

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.71

系列

2N62

包装

Tube

JESD-609代码

e3

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

配置

Single

集电极基极电压(VCBO)

140 V

连续集电极电流

3 A