Central Semiconductor 2N6299 TIN/LEAD

包装/外壳

TO-66-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

2 V

Maximum DC Collector Current

16 A

Pd - Power Dissipation

75 W

Gain Bandwidth Product fT

4 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

750 at 4 A, 3 V

DC Current Gain hFE Max

18000 at 4 A, 3 V

Factory Pack QuantityFactory Pack Quantity

30

系列

2N6299

包装

Tube

配置

Single

集电极基极电压(VCBO)

80 V

连续集电极电流

8 A