Central Semiconductor 2N6301 PBFREE

包装/外壳

TO-66-2

表面安装

NO

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

3 V

Pd - Power Dissipation

75 W

Gain Bandwidth Product fT

4 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

750 at 4 A, 3 V

DC Current Gain hFE Max

18000 at 4 A, 3 V

Factory Pack QuantityFactory Pack Quantity

30

Package Description

,

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

有

Transition Frequency-Nom (fT)

4 MHz

Manufacturer Part Number

2N6301PBFREE

Part Life Cycle Code

活跃

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Risk Rank

5.6

系列

2N63

包装

Tube

JESD-609代码

e3

端子表面处理

镍外哑光锡

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

配置

Single

极性/通道类型

NPN

集电极基极电压(VCBO)

80 V

最大耗散功率(Abs)

75 W

集电极电流-最大值(IC)

8 A

最小直流增益（hFE）

750

连续集电极电流

8 A