Central Semiconductor 2N6386 TIN/LEAD

包装/外壳

TO-220-3

Factory Pack QuantityFactory Pack Quantity

50

DC Current Gain hFE Max

20000

DC Collector/Base Gain hfe Min

1000

Gain Bandwidth Product fT

20 MHz

Pd - Power Dissipation

65 W

Maximum DC Collector Current

-

Collector-Emitter Saturation Voltage

2 V

Emitter- Base Voltage VEBO

-

Collector- Emitter Voltage VCEO Max

40 V

Transistor Polarity

NPN

Mounting Styles

通孔

RoHS

N

包装

Bulk

系列

2N6386

配置

Single

集电极基极电压(VCBO)

40 V

连续集电极电流

8 A