Central Semiconductor 2N6433 TIN/LEAD

包装/外壳

TO-18-3

Factory Pack QuantityFactory Pack Quantity

2000

DC Current Gain hFE Max

150 at 30 mA, 10 V

DC Collector/Base Gain hfe Min

25 at 1 mA, 10 V

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

- 65 C

Gain Bandwidth Product fT

50 MHz

Pd - Power Dissipation

500 mW

Maximum DC Collector Current

-

Collector-Emitter Saturation Voltage

500 mV

Emitter- Base Voltage VEBO

5 V

Collector- Emitter Voltage VCEO Max

300 V

Transistor Polarity

PNP

Mounting Styles

通孔

RoHS

N

包装

Bulk

系列

2N6433

配置

Single

集电极基极电压(VCBO)

300 V

连续集电极电流

500 mA