Central Semiconductor 2N6491 TIN/LEAD

包装/外壳

TO-220-3

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

80 V

Emitter- Base Voltage VEBO

5 V

Collector-Emitter Saturation Voltage

1.3 V

Maximum DC Collector Current

-

Pd - Power Dissipation

1.8 W

Gain Bandwidth Product fT

5 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

20

DC Current Gain hFE Max

150

Factory Pack QuantityFactory Pack Quantity

50

系列

2N6491

包装

Bulk

配置

Single

集电极基极电压(VCBO)

90 V

连续集电极电流

15 A