Central Semiconductor 2N6545 TIN/LEAD

包装/外壳

TO-3-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

NPN

Collector- Emitter Voltage VCEO Max

400 V

Emitter- Base Voltage VEBO

9 V

Collector-Emitter Saturation Voltage

1.5 V

Maximum DC Collector Current

16 A

Pd - Power Dissipation

125 W

Gain Bandwidth Product fT

28 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

12

DC Current Gain hFE Max

60

Factory Pack QuantityFactory Pack Quantity

20

系列

2N6545

包装

Tube

配置

Single

集电极基极电压(VCBO)

850 V

连续集电极电流

8 A