Central Semiconductor 2N6609 TIN/LEAD

包装/外壳

TO-3-2

RoHS

N

Mounting Styles

通孔

Transistor Polarity

PNP

Collector- Emitter Voltage VCEO Max

140 V

Emitter- Base Voltage VEBO

7 V

Collector-Emitter Saturation Voltage

1.4 V

Maximum DC Collector Current

30 A

Pd - Power Dissipation

150 W

Gain Bandwidth Product fT

4 MHz

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

15 at 8 A, 4 V

DC Current Gain hFE Max

60 at 8 A, 4 V

Factory Pack QuantityFactory Pack Quantity

20

系列

2N6609

包装

Tube

配置

Single

集电极基极电压(VCBO)

160 V

连续集电极电流

16 A